N-Channel IGBT Transistor 14A 600V

Description:

UFS N-Channel IGBT Transistor 

The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor. 

Maximum Ratings 

  • Collector-Emitter Voltage: 600V 
  • Collector Current Continuous 
  • At TC = 25 C: 14A 
  • At TC = 110 C: 7A 
  • Average Diode Forward Current at 110 C: 8A 
  • Collector Current Pulsed: 56A 
  • Gate-Emitter Voltage Continuous:  20V 
  • Gate-Emitter Voltage Pulsed:  30V 
  • Switching Safe Operating Area at TJ = 150 C: 40A @ 480V 
  • Power Dissipation Total at TC = 25 C: 60W 
  • Derating TC > 25 C: 0.487W/ C 
  • Operating and Storage Junction Temperature Range: -40  to 150 C 
  • Short Circuit Withstand Time @ VGE = 15V: 1us 
  • Short Circuit Withstand Time @ VGE = 10V: 8us 

Applications: 

  • AC and DC Motor Controls 
  • Power Supplies and Drivers for Solenoids 
  • Relays and Contactors 

Manufactured by: Harris 

  • Part Number: HGT1S7N60C3D 

Features:

  • 14A600V at TC = 25 C 
  • 600V Switching SOA Capability 
  • Typical Fall Time: 140ns @ TJ = 150 C 
  • Short Circuit Rating 
  • Low Conduction Loss 
  • Hyperfast Anti-Parallel Diode 

Documents:

3 JD
Quantity
167 in stock
3 JD 1+ units
2.85 JD 10+ units
2.7 JD 25+ units
2.55 JD 100+ units



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