1Pair Photodiode QSE113 and EMITTING DIODE QEE113
The QSE113/QEE113 Infrared Sensor Pair is a matched IR phototransistor and IR emitting diode designed for optical sensing and object detection systems. The emitter operates at 940nm, while the phototransistor is optimized for 880nm sensitivity, enabling reliable infrared signal detection. With a side-looking through-hole package and wide 50° viewing angle, this pair is ideal for encoders, proximity sensors, and automation systems requiring accurate and stable IR communication.
تعتبر مجموعة QSE113/QEE113 زوجاً متكاملاً من دايود باعث للأشعة تحت الحمراء ومستشعر فوتوترانزستور مخصص لتطبيقات الاستشعار البصري. يعمل الباعث بطول موجي 940nm بينما يستقبل المستشعر عند 880nm لضمان كشف دقيق للإشارة. تأتي الحزمة بتصميم جانبي بزاوية رؤية 50°، مما يجعلها مناسبة لأنظمة كشف الأجسام، العدادات الضوئية، والأنظمة الصناعية التي تعتمد على الأشعة تحت الحمراء.
The QSE113/QEE113 Infrared Optoelectronic Pair is a matched emitter and detector set designed for reliable infrared sensing applications. The system includes the QEE113 IR LED emitter and the QSE113 silicon phototransistor, both housed in a side-looking through-hole package for easy alignment in optical sensing assemblies.
The QEE113 emitter produces infrared light at a wavelength of 940nm, while the QSE113 phototransistor is optimized for detection around 880nm, ensuring efficient infrared signal coupling. This combination is commonly used in reflective and interruptive sensing systems.
The phototransistor supports a maximum collector-emitter voltage of 30V and a very low dark current of 100nA, ensuring high sensitivity and low noise performance. The emitter diode operates with a forward current up to 50mA, providing strong infrared output for reliable detection over short distances.
With a 50° viewing angle and side-looking configuration, the pair is suitable for precise alignment in mechanical slots, encoder wheels, and motion detection systems. It is widely used in industrial automation, robotics, and optical feedback systems.
Specifications
QSE113 Phototransistor
| Parameter | Value |
|---|---|
| Type | Silicon IR Phototransistor |
| Collector-Emitter Voltage | 30V max |
| Dark Current | 100 nA max |
| Wavelength Sensitivity | 880 nm |
| Power Dissipation | 100 mW max |
| Viewing Angle | 50° |
| Operating Temperature | −40°C to 100°C |
| Package Type | Radial, Side View |
QEE113 Infrared LED
| Parameter | Value |
|---|---|
| Type | Infrared LED |
| Wavelength | 940 nm |
| Forward Current | 50 mA max |
| Forward Voltage | 1.5V (typical) |
| Radiant Intensity | 3 mW/sr @ 100 mA |
| Viewing Angle | 50° |
| Operating Temperature | −40°C to 100°C |
| Package Type | Radial, Side View |
Applications
- Optical Encoders
- Object Detection Sensors
- Line Tracking Systems
- Industrial Automation Equipment
- Speed Measurement Systems
- Slot and Interrupt Sensors
- Robotics Navigation Systems
- Infrared Communication Systems
- Position Feedback Systems
- DIY Electronics and Arduino Projects