Name: N421AB IGBT Transistor | N421AB, IGBT, Transistor
Brand: Mikroelectron
SKU: me-2795
Price: 3.00 JOD
Availability: Discontinued
Rating: 5.0 (1 reviews)

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N421AB, IGBT, Transistor

The HGT1S7N60C3D is a 600V, 14A N-channel IGBT (Insulated Gate Bipolar Transistor) from the UFS (Ultrafast) series, combining the best characteristics of two transistor technologies into a single rugged power device. Like a MOSFET, it offers a voltage-controlled gate with extremely high input impedance, allowing it to be driven from low-current logic or gate-driver circuits. Like a bipolar transistor, it provides low on-state conduction losses, making it highly efficient when switching large currents at high voltages.This IGBT also includes an integrated anti-parallel ultrafast diode between the collector and emitter, which is essential for handling inductive loads and freewheeling currents in motor drives, half-bridge, and full-bridge inverter topologies — eliminating the need for a separate external diode in many designs.With a collector-emitter voltage rating of 600V, 14A continuous current at 25°C (7A at 110°C case temperature), and a pulsed current capability of 56A, the HGT1S7N60C3D is well suited for mains-powered (110V / 220V / 380V) applications such as variable-frequency drives, induction heaters, welding inverters, and uninterruptible power supplies (UPS).The device features an excellent switching safe operating area (SOA) of 40A at 480V (at T_J = 150°C) and a short-circuit withstand time of up to 8µs at V_GE = 10V, providing strong protection margins in fault conditions. The integrated diode supports an average forward current of 8A at 110°C, sufficient for most freewheeling applications.Note on gate drive: Like all IGBTs, the HGT1S7N60C3D should be driven with a dedicated IGBT gate driver IC providing +15V to turn fully ON and 0V (or negative voltage) to turn OFF. The maximum continuous gate-emitter voltage is ±20V, with a pulsed limit of ±30V.<h3>&nbsp;</h3><h3>Specifications</h3><h4>Maximum Ratings (T_C = 25°C unless otherwise noted)</h4><ul><li>Transistor Type: N-Channel IGBT with anti-parallel diode (UFS series)</li><li>Collector-Emitter Voltage (V_CES): 600V</li><li>Continuous Collector Current at T_C = 25°C: 14A</li><li>Continuous Collector Current at T_C = 110°C: 7A</li><li>Pulsed Collector Current: 56A</li><li>Anti-Parallel Diode Average Forward Current at 110°C: 8A</li><li>Continuous Gate-Emitter Voltage (V_GE): ±20V</li><li>Pulsed Gate-Emitter Voltage: ±30V</li><li>Switching Safe Operating Area (T_J = 150°C): 40A @ 480V</li><li>Total Power Dissipation at T_C = 25°C: 60W</li><li>Derating Above 25°C: 0.487 W/°C</li><li>Operating / Storage Junction Temperature: −40°C to +150°C</li><li>Short-Circuit Withstand Time @ V_GE = 15V: 1 µs</li><li>Short-Circuit Withstand Time @ V_GE = 10V: 8 µs</li></ul><h3>&nbsp;</h3><h3>Applications</h3><ul><li>AC and DC motor control (variable-frequency drives, VFDs)</li><li>Switch-mode power supplies (SMPS) and DC-DC converters</li><li>Inverters and converters for industrial and renewable energy</li><li>Welding inverters and power tools</li><li>Induction heating systems</li><li>Solenoid and relay drivers for high-voltage circuits</li><li>Contactor drive circuits</li><li>Uninterruptible Power Supplies (UPS)</li><li>Solar inverters and renewable energy systems</li><li>Battery chargers for high-power applications</li><li>Half-bridge and full-bridge inverter topologies</li><li>High-power lighting drivers (HID, fluorescent ballasts)</li><li>HVAC and industrial automation control</li><li>EV charging and motor drive systems</li></ul>

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HGT1S7N 60C 3D IGBT  N Channel IGBT 600V   14A IGBT Transistor  Power Switching IGBT

The HGT1S7N60C3D N-Channel IGBT Transistor combines the high input impedance of a MOSFET with the low conduction loss of a bipolar transistor, making it perfect for high-voltage switching. It handles 600V collector-emitter voltage, 14A continuous current, and 56A pulsed current, with a built-in anti-parallel diode. Ideal for AC/DC motor control, switch-mode power supplies, solenoid drivers, relays, contactors, inverters, and high-voltage switching applications in industrial electronics.

ترانزستور IGBT قناة N موديل HGT1S7N60C3D يجمع بين مقاومة الدخل العالية للـ MOSFET وخسائر التوصيل المنخفضة للترانزستور ثنائي القطب، مما يجعله مثالياً للتبديل عالي الجهد. يتحمّل جهد جامع-باعث 600 فولت وتياراً مستمراً 14 أمبير وتياراً نبضياً 56 أمبير، مع ديود مدمج بالتوازي العكسي. مثالي للتحكم بمحركات AC/DC، مصادر الطاقة المفتاحية، قيادة الملفات، الريليهات، العاكسات، وتطبيقات التبديل عالي الجهد في الإلكترونيات الصناعية.

N421AB IGBT Transistor

N-Channel IGBT Transistor 14A 60...