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IRF540 MOSFET N-Channel 33A 100V

5.0(1 review)
SKU: ME-435
JD0.75JD1.00

The IRF540 N-Channel MOSFET is a high-performance power transistor in a robust TO-220AB package. It handles a continuous drain current of 33A, a drain-source voltage up to 100V, and dissipates up to 130W with a low on-resistance of 44 mΩ. Ideal for motor control, power supplies, inverters, high-current switching, and load driving from Arduino, Raspberry Pi, and other microcontrollers — with pulse current up to 110A for demanding applications.

ترانزستور MOSFET قناة N موديل IRF540 هو ترانزستور قدرة عالي الأداء بغلاف TO-220AB متين. يتحمّل تياراً مستمراً 33 أمبير وجهد جامع-باعث حتى 100 فولت ويبدّد قدرة تصل إلى 130 واط، بمقاومة تشغيل منخفضة تبلغ 44 مللي أوم. مثالي لتطبيقات التحكم بالمحركات، مصادر الطاقة، العاكسات، التبديل بالتيارات العالية، وقيادة الأحمال من Arduino وRaspberry Pi، مع تيار نبضي يصل إلى 110 أمبير للتطبيقات الصعبة.

Transistors

The IRF540 is a widely used N-channel power MOSFET designed for high-current switching and amplification in industrial, automotive, and DIY electronics applications. Built into the rugged TO-220AB through-hole package, it provides excellent thermal performance and is easy to mount on standard heatsinks for sustained high-power operation.

With a maximum drain-source voltage of 100V, continuous drain current of 33A, and a pulsed current capability of up to 110A, the IRF540 is well suited for driving heavy loads such as DC motors, solenoids, high-power LEDs, lamps, heaters, and inverters. Its low on-resistance (RDS(on)) of just 44 mΩ keeps power losses minimal, allowing the transistor to switch high currents efficiently with reduced heat generation.

The IRF540 supports a wide operating junction temperature range from −55°C to +175°C, making it reliable in demanding environments. Its 130W power dissipation rating and low thermal resistance (junction-to-case) of 1.1°C/W allow it to handle continuous high-power switching when properly heatsinked.

Note on gate drive: The IRF540 is not a logic-level MOSFET — it typically requires a gate-source voltage of around 10V for full enhancement. To switch the IRF540 reliably from a 5V Arduino or 3.3V microcontroller, use a dedicated MOSFET gate driver IC or a small NPN/PNP driver stage. For direct logic-level driving, consider the IRF540N's logic-level cousins like the IRL540 or IRLZ44N.

 

Specifications

  • Transistor Type: N-Channel Power MOSFET
  • Drain-Source Voltage (V_DS) Max: 100V
  • Continuous Drain Current (I_D) Max: 33A
  • Pulsed Drain Current (I_DM): 110A
  • On-Resistance (R_DS(on)): 44 mΩ
  • Power Dissipation (P_D): 130W
  • Thermal Resistance (Junction-to-Case): 1.1°C/W
  • Operating Junction Temperature: −55°C to +175°C
  • Package / Case: TO-220AB
  • Mounting Type: Through-hole
  • Pin Count: 3 (Gate, Drain, Source)
  • Pin Spacing: 2.54 mm

 

Pin Configuration (TO-220AB)

  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)

 

Applications

  • DC motor control and H-bridge driver circuits
  • PWM speed control for motors, fans, and pumps
  • High-current LED and lamp drivers
  • Switching power supplies and DC/DC converters
  • Inverter and converter circuits
  • Battery management and charge controllers
  • Solenoid and relay drivers
  • Audio amplifier output stages (Class-D)
  • Solar charge controllers
  • Automotive electronics and switching applications
  • Industrial control and automation systems
  • Robotics and high-current actuator control
  • Welding equipment and power tools
  • Arduino, Raspberry Pi, ESP32 high-current load control (with proper gate driver)
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