IRF630N N-MOSFET 200V 9.3A
The IRF630N N-Channel Power MOSFET is a high-voltage switching transistor in a robust TO-220 package. It handles a drain-source voltage up to 200V, continuous drain current of 9.3A, and dissipates up to 82W with a low on-resistance of 0.30Ω (300 mΩ). Ideal for high-voltage switching, switch-mode power supplies, motor control, inverters, lighting drivers, and load control in industrial, automotive, and DIY electronics projects.
ترانزستور MOSFET قناة N موديل IRF630N هو ترانزستور تبديل عالي الجهد بغلاف TO-220 متين. يتحمّل جهد جامع-باعث يصل إلى 200 فولت وتياراً مستمراً 9.3 أمبير ويبدّد قدرة تصل إلى 82 واط، بمقاومة تشغيل منخفضة تبلغ 0.30 أوم (300 مللي أوم). مثالي لتطبيقات التبديل عالي الجهد، مصادر الطاقة بالنمط المفتاحي، التحكم بالمحركات، العاكسات، قيادة الإضاءة، والتحكم بالأحمال في الإلكترونيات الصناعية ومشاريع DIY.
The IRF630N is a versatile N-channel power MOSFET designed for high-voltage switching and amplification applications. Built into the rugged TO-220 through-hole package, this MOSFET delivers reliable performance and is easy to mount on standard heatsinks for sustained operation under load.
With a maximum drain-source voltage of 200V and a continuous drain current rating of 9.3A, the IRF630N is particularly well suited for high-voltage circuits where standard 100V MOSFETs fall short — such as mains-rectified power supplies, off-line converters, fluorescent ballasts, induction heaters, and high-voltage motor drives. Its 82W power dissipation rating allows it to handle continuous high-power switching when properly heatsinked.
The transistor's low on-resistance of 0.30Ω (300 mΩ) keeps conduction losses minimal during operation, while its fast switching characteristics make it suitable for high-frequency PWM applications including switch-mode power supplies (SMPS), DC-DC converters, and inverters. Its high voltage rating provides excellent margin in 110V and 220V mains-derived circuits.
Note on gate drive: The IRF630N is not a logic-level MOSFET and typically requires a gate-source voltage of around 10V for full enhancement. To switch the IRF630N from a 5V Arduino or 3.3V microcontroller, use a dedicated MOSFET gate driver IC or a transistor-based driver stage to provide the proper gate voltage.
Specifications
- Transistor Type: N-Channel Power MOSFET
- Drain-Source Voltage (V_DS) Max: 200V
- Continuous Drain Current (I_D) Max: 9.3A
- On-Resistance (R_DS(on)): 0.30 Ω (300 mΩ)
- Power Dissipation (P_D): 82W
- Package / Case: TO-220
- Mounting Type: Through-hole
- Pin Count: 3 (Gate, Drain, Source)
Pin Configuration (TO-220)
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
Applications
- High-voltage switching circuits
- Switch-mode power supplies (SMPS) and DC-DC converters
- Inverters and converters (including 110V / 220V derived rails)
- Motor control and high-voltage motor drivers
- Fluorescent and HID lamp ballasts
- Induction heating circuits
- Audio amplifier output stages (Class-D)
- Battery charger and power management systems
- Solenoid and relay drivers
- Solar charge controllers and renewable energy systems
- Industrial control and automation
- Welding equipment and power tools
- High-power LED and lamp drivers
- Arduino, Raspberry Pi, ESP32 projects (with appropriate gate driver)