K50T60 - IGBT - 80A 600V
DatasheetThe K50T60 IGBT 80A 600V is a high-performance power transistor designed for efficient high-voltage switching applications. Built with advanced TRENCHSTOP™ and Fieldstop technology, it delivers low conduction losses, fast switching speed, and stable thermal performance. Featuring an integrated fast recovery anti-parallel diode, 80A current capacity, and 600V voltage rating, it is ideal for frequency converters, UPS systems, motor control, and industrial power electronics requiring reliable and efficient operation.
وحدة K50T60 IGBT 80A 600V هي ترانزستور قدرة عالي الأداء مخصص لتطبيقات التبديل والتحكم بالطاقة ذات الجهد العالي. تعتمد على تقنية TRENCHSTOP™ وFieldstop لتوفير فقدان طاقة منخفض وسرعة تبديل عالية واستقرار حراري ممتاز. تتميز بديود مدمج سريع الاستعادة وتحمل تيار يصل إلى 80A وجهد 600V، مما يجعلها مناسبة لمحولات التردد وأنظمة UPS والتحكم بالمحركات والتطبيقات الصناعية عالية الكفاءة.
The K50T60 IGBT is a high-efficiency insulated gate bipolar transistor designed for demanding industrial power switching applications. Utilizing advanced TRENCHSTOP™ and Fieldstop technology, the device offers superior switching performance, reduced power loss, and enhanced thermal stability for 600V power systems.
This module integrates a soft and fast recovery anti-parallel Emitter Controlled HE diode, improving switching efficiency while minimizing electromagnetic interference (EMI) and switching losses. The device provides a low typical VCE(sat) of 1.5V, enabling efficient operation in high-current applications.
With an 80A current rating and support for junction temperatures up to 175°C, the K50T60 is suitable for high-power industrial environments requiring stable and rugged performance. It also features a 5µS short-circuit withstand capability, ensuring improved reliability and system protection during fault conditions.
The transistor is optimized for applications such as frequency converters, uninterrupted power supplies (UPS), motor drives, inverters, and industrial automation systems. Its low gate charge, fast switching characteristics, and positive temperature coefficient improve overall system efficiency and simplify parallel operation.
Manufactured with Pb-free lead plating and fully RoHS compliant, the K50T60 meets modern environmental and industrial standards while providing reliable long-term operation.
Specifications
- Product Type: IGBT Power Transistor
- Model: K50T60
- Technology: TRENCHSTOP™ & Fieldstop
- Collector-Emitter Voltage (VCE): 600V
- Collector Current: 80A
- Typical VCE(sat): 1.5V
- Maximum Junction Temperature: 175°C
- Short Circuit Withstand Time: 5µS
- Integrated Diode: Fast Recovery Anti-Parallel HE Diode
- Switching Performance: High-Speed Switching
- Compliance: RoHS Compliant / Pb-Free
Applications
- Frequency Converters
- UPS Systems
- Motor Drives
- Industrial Inverters
- Power Switching Circuits
- Industrial Automation
- High-Power SMPS Systems
- Renewable Energy Systems
- Power Control Modules
- High-Efficiency Power Electronics