N-Channel IGBT Transistor 14A 600V HGT1S7N60C3D

The HGT1S7N60C3D is a 600V, 14A N-channel IGBT (Insulated Gate Bipolar Transistor) from the UFS (Ultrafast) series, combining the best characteristics of two transistor technologies into a single rugged power device. Like a MOSFET, it offers a voltage-controlled gate with extremely high input impedance, allowing it to be driven from low-current logic or gate-driver circuits. Like a bipolar transistor, it provides low on-state conduction losses, making it highly efficient when switching large currents at high voltages.

This IGBT also includes an integrated anti-parallel ultrafast diode between the collector and emitter, which is essential for handling inductive loads and freewheeling currents in motor drives, half-bridge, and full-bridge inverter topologies — eliminating the need for a separate external diode in many designs.

With a collector-emitter voltage rating of 600V, 14A continuous current at 25°C (7A at 110°C case temperature), and a pulsed current capability of 56A, the HGT1S7N60C3D is well suited for mains-powered (110V / 220V / 380V) applications such as variable-frequency drives, induction heaters, welding inverters, and uninterruptible power supplies (UPS).

The device features an excellent switching safe operating area (SOA) of 40A at 480V (at T_J = 150°C) and a short-circuit withstand time of up to 8µs at V_GE = 10V, providing strong protection margins in fault conditions. The integrated diode supports an average forward current of 8A at 110°C, sufficient for most freewheeling applications.

Note on gate drive: Like all IGBTs, the HGT1S7N60C3D should be driven with a dedicated IGBT gate driver IC providing +15V to turn fully ON and 0V (or negative voltage) to turn OFF. The maximum continuous gate-emitter voltage is ±20V, with a pulsed limit of ±30V.

Specifications

Maximum Ratings (T_C = 25°C unless otherwise noted)

• Transistor Type: N-Channel IGBT with anti-parallel diode (UFS series)
• Collector-Emitter Voltage (V_CES): 600V
• Continuous Collector Current at T_C = 25°C: 14A
• Continuous Collector Current at T_C = 110°C: 7A
• Pulsed Collector Current: 56A
• Anti-Parallel Diode Average Forward Current at 110°C: 8A
• Continuous Gate-Emitter Voltage (V_GE): ±20V
• Pulsed Gate-Emitter Voltage: ±30V
• Switching Safe Operating Area (T_J = 150°C): 40A @ 480V
• Total Power Dissipation at T_C = 25°C: 60W
• Derating Above 25°C: 0.487 W/°C
• Operating / Storage Junction Temperature: −40°C to +150°C
• Short-Circuit Withstand Time @ V_GE = 15V: 1 µs
• Short-Circuit Withstand Time @ V_GE = 10V: 8 µs

Applications

• AC and DC motor control (variable-frequency drives, VFDs)
• Switch-mode power supplies (SMPS) and DC-DC converters
• Inverters and converters for industrial and renewable energy
• Welding inverters and power tools
• Induction heating systems
• Solenoid and relay drivers for high-voltage circuits
• Contactor drive circuits
• Uninterruptible Power Supplies (UPS)
• Solar inverters and renewable energy systems
• Battery chargers for high-power applications
• Half-bridge and full-bridge inverter topologies
• High-power lighting drivers (HID, fluorescent ballasts)
• HVAC and industrial automation control
• EV charging and motor drive systems