IGBT Transistor 20A 600v (19NC60W)
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.
- High frequency motor controls, inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies
- Part number STGP19NC60W Marking GP19NC60W Package TO-220 Packaging Tube
- This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
- Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) = 25°C Collector current (continuous) = 100°C Collector current (pulsed) Gate-emitter voltage Total dissipation = 25°C Storage temperature to 150 Operating junction temperature °C Value Unit
- Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 1 62.5 Unit °C/W