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Power MOSFET IRF530
Description:
DS = 100V, ID = 15A
RDS(ON) < 90mΩ @ VGS=10V
RDS(ON) < 115mΩ @ VGS=4.5V
High-density cell design for lower Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for efficient heat dissipation
100% UIS TESTED!
100% DVDS TESTED!
Absolute Maximum Ratings:
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 15A
Pulsed Drain Current (IDM): 40A
Maximum Power Dissipation (Tc=25℃): 31W
Single Pulse Avalanche Energy (EAS): 21mJ
Operating Junction and Storage Temperature Range: -55 To 175℃
Thermal Resistance, Junction-to-Case (RθJC): 4.8 ℃/W
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E-components,
Transistors,
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