Description:

UFS N-Channel IGBT Transistor 

The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor. 

Maximum Ratings 

• Collector-Emitter Voltage: 600V 
• Collector Current Continuous 
• At TC = 25 C: 14A 
• At TC = 110 C: 7A 
• Average Diode Forward Current at 110 C: 8A 
• Collector Current Pulsed: 56A 
• Gate-Emitter Voltage Continuous:  20V 
• Gate-Emitter Voltage Pulsed:  30V 
• Switching Safe Operating Area at TJ = 150 C: 40A @ 480V 
• Power Dissipation Total at TC = 25 C: 60W 
• Derating TC > 25 C: 0.487W/ C 
• Operating and Storage Junction Temperature Range: -40  to 150 C 
• Short Circuit Withstand Time @ VGE = 15V: 1us 
• Short Circuit Withstand Time @ VGE = 10V: 8us 

Applications: 

• AC and DC Motor Controls 
• Power Supplies and Drivers for Solenoids 
• Relays and Contactors 

Manufactured by: Harris 

• Part Number: HGT1S7N60C3D 

Features:

• 14A600V at TC = 25 C 
• 600V Switching SOA Capability 
• Typical Fall Time: 140ns @ TJ = 150 C 
• Short Circuit Rating 
• Low Conduction Loss 
• Hyperfast Anti-Parallel Diode 

Documents:

•  Harris 14A 600V UFS Transistor HGT1S7N60C3D