Description:
UFS N-Channel IGBT Transistor
The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor.
Maximum Ratings
Applications:
Manufactured by: Harris
Features:
Documents:
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Quantity |
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9 in stock | |
3 JD | 1+ units |
2.85 JD | 10+ units |
2.7 JD | 25+ units |
2.55 JD | 100+ units |